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Focused ion beam and field-emission microscopy of metallic filaments in memory devices based on thin films of an ambipolar organic compound consisting of oxadiazole, carbazole, and fluorene units

Applied Physics Letters

By:
, , , , , , and
DOI: 10.1063/1.4808026

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Abstract

We report on the mechanism of operation of organic thin film resistive memory architectures based on an ambipolar compound consisting of oxadiazole, carbazole, and fluorene units. Cross-sections of the devices have been imaged by electron microscopy both before and after applying a voltage. The micrographs reveal the growth of filaments, with diameters of 50 nm–100 nm, on the metal cathode. We suggest that these are formed by the drift of aluminium ions from the anode and are responsible for the observed switching and negative differential resistance phenomena in the memory devices.

Additional Publication Details

Publication type:
Article
Publication Subtype:
Journal Article
Title:
Focused ion beam and field-emission microscopy of metallic filaments in memory devices based on thin films of an ambipolar organic compound consisting of oxadiazole, carbazole, and fluorene units
Series title:
Applied Physics Letters
DOI:
10.1063/1.4808026
Volume
102
Issue:
21
Year Published:
2013
Language:
English
Publisher:
American Institute of Physics
Publisher location:
Melville, NY
Description:
4 p.
Larger Work Type:
Article
Larger Work Subtype:
Journal Article
Larger Work Title:
Applied Physics Letters
Number of Pages:
4